This inventor holds 136 USPTO granted patents and 30 published patent applications and 11 EPO patents, primarily in Non-Volatile Memory (CPC class G11C16-0483). Top assignees: Sandisk Technologies Inc., Western Digital Technologies, Inc.. Active years: 2013-2026.
Inventors with similar research interests:
Location History:
- Femont, CA (US) (2016)
- Milpitas, CA (US) (2013 - 2017)
- San Jose, CA (US) (2021)
- Fremont, CA (US) (2015 - 2024)
Company Filing History:
130 out of 4,930 
5 out of 5,424 
Years Active: 2013-2026
Areas of Expertise:
Title: Jiahui Yuan: Innovating the Future of Memory Storage
Introduction:
In the realm of technological advancements, the name Jiahui Yuan shines bright. As an accomplished inventor and contributor to the field of memory storage, Yuan has made substantial contributions to the industry. Hailing from Fremont, CA, Yuan has amassed a remarkable portfolio of patents and worked with notable companies like SanDisk Technologies Inc. and Western Digital Technologies, Inc. Let's delve into his latest patents, career highlights, and collaborations.
Latest Patents:
Jiahui Yuan has an impressive count of 55 patents to his name. Among his most recent inventions is the "Loop dependent word line ramp start time for program verify of multi-level NAND memory." This patent addresses the need to reduce spikes in current during write operations on NAND memory dies using smart verify. By introducing varying amounts of delay into programming loops based on the number of verify levels, Yuan's invention optimizes the biasing of selected word lines, resulting in enhanced efficiency.
Another noteworthy patent is the "Non-volatile memory with staggered ramp down at the end of pre-charging." This innovation works to inhibit memory cells from inadvertent programming and mitigates program disturbance. By applying positive voltages to control lines and ramping them down, this invention boosts channel voltages for unselected NAND strings while allowing selected NAND strings to program memory cells. The staggered ramp down technique ensures the smooth functioning of memory storage systems.
Career Highlights:
During his professional journey, Jiahui Yuan has worked with esteemed companies, including SanDisk Technologies Inc. and Western Digital Technologies, Inc. Additionally, he has consistently pushed the boundaries of memory storage technologies, earning him recognition and respect in the industry. Yuan's patents have made a significant impact on the advancement and evolution of memory storage solutions.
Collaborations:
Collaboration has been an essential aspect of Jiahui Yuan's career, with several notable colleagues standing beside him in his innovation endeavors. One such collaborator is Yingda Dong, a valued partner in the research and development of cutting-edge memory storage solutions. Together, they have created a formidable team, producing remarkable patents that have shaped the industry. Another coworker, Liang Pang, has also contributed to Yuan's innovative work, adding value and expertise to their collective inventions.
Conclusion:
Jiahui Yuan's contributions to memory storage innovation have made a lasting impact on the industry. His numerous patents, such as the loop-dependent word line ramp start time and the non-volatile memory with staggered ramp down, exemplify his dedication to pushing the boundaries of what is possible. Collaborating with talented individuals like Yingda Dong and Liang Pang has further fueled Yuan's success. As the field of memory storage continues to evolve, Jiahui Yuan's contributions will undoubtedly shape its future.