Three-dimensional semiconductor device containing core-bias electrode surrounded by vertical semiconductor channel and method of forming the same

Abstract

A semiconductor device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film, a vertical semiconductor channel that is laterally surrounded by the memory film, a drain region contacting a first end portion of the vertical semiconductor channel, a dielectric core surrounded by the vertical semiconductor channel, and a core-bias electrode surrounded by the dielectric core. A source layer contacts a second end portion of the vertical semiconductor channel and an end portion of the core-bias electrode.