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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12784847 B1

PDFFull Text
Date of Patent:
Nov. 03, 2026

Filed:

Jul. 29, 2024

Coarse/fine programming of non-volatile memory for tighter threshold voltage distributions

Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Wei Cao, Fremont, CA (US);

Muhammad Masuduzzaman, Chandler, AZ (US);

Xiang Yang, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:

PEARL COHEN LLP

Primary Examiner:

Donald H B Braswell

Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/3404 (2013.01);
Abstract

To reduce errors when reading programmed data, a non-volatile memory programs data to narrower threshold voltage distributions by slowing down programming using a first technique for slowing programming after a memory cell reaches an intermediate condition and using a second technique for slowing programming after using the first technique and prior to inhibiting programming for the memory cell. In one embodiment, the first technique comprises applying a program slowing voltage to a bit line connected to the non-volatile memory cell while applying one dose of programming and the second technique comprises applying to the bit line the program slowing voltage for a first portion of a dose of programming and a program inhibit voltage for a second portion of the dose of programming.

Find Patent Forward Citations

Quick Actions:

Cao, Wei. (2026). Coarse/fine programming of non-volatile memory for tighter threshold voltage distributions (U.S. Patent No. 12784847). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784847

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