The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Feb. 22, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Wei Li, Shanghai, CN;

Jiacen Guo, Sunnyvale, CA (US);

Weiyi Li, Fremont, CA (US);

Yichen Wang, Shanghai, CN;

Xiang Yang, Santa Clara, CA (US);

Liang Li, Shanghai, CN;

Ming Wang, Shanghai, CN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0433 (2013.01); G11C 16/28 (2013.01);
Abstract

Technology for compensation for a sub-block mode (SBM) back pattern effect. When in a sub-block mode, the memory system determines a magnitude for a program verify voltage for a selected word line in a selected sub-block in a selected block. The magnitude for the program verify voltage depends on a programmed status of the word lines in one or more unselected sub-blocks in the selected block when the program verify voltage is applied to the selected word line. The memory system may also determine a magnitude for a read reference voltage for the selected word line. The magnitude for the read reference voltage depends on a programmed status of the word lines in the one or more unselected sub-blocks in the selected block when the read reference voltage is applied to the selected word line.


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