Ming Wang

This inventor holds 27 USPTO granted patents and 12 published patent applications and 5 EPO patents. Top assignees: Sandisk Technologies Inc., Basf Coatings Gmbh, Delta Electronics (Shanghai) Co., Ltd. Active years: 2025-2026.

USPTO Granted Patents = 27 (Patent Applications = 12)

% Patents Active = 59.3

EPO Patents = 5 (Patent Applications = 12)

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 1(Granted Patents)

Company Filing History:

24 out of 4,930

Sandisk Technologies Inc.

Delta Electronics (Shanghai) Co., Ltd

Years Active: 2025-2026

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27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12731657 - Read retry with physical defect judgement (2026-09-08),

2. 12725664 - Sub-block mode back pattern effect compensation (2026-09-01),

3. 12706157 - Suspend-resume-go techniques for memory devices (2026-08-11),

4. 12675397 - Pre-charge at read recovery clock from bit line side for sub-block one performance improvement (2026-07-07),

5. 12646575 - String based erase inhibit for one sided gate-induced drain leakage erase (2026-06-02),

6. 12640206 - Post-program erase in 3D NAND (2026-05-26),

7. 12592291 - Non-volatile memory with in-place error updating and correction (2026-03-31),

8. 12580030 - Dynamic bit line voltage during program verify to provide more threshold voltage budget (2026-03-17),

9. 12580023 - Bit line timing based cell tracking quick pass write for programming non-volatile memory apparatuses (2026-03-17),

10. 12579030 - Compute-in-memory using neural networks stored in a non-volatile memory for predictive block health assessment of the non-volatile memory (2026-03-17),

11. 12577341 - Copolymer derived from substituted benzopinacol and use of the same as polymerization initiator (2026-03-17),

12. 12562234 - Non-volatile memory with in-place error correction (2026-02-24),

13. 12562232 - Non-volatile memory with concurrent programming (2026-02-24),

14. 12555636 - Device mode to improve data retention for NAND MLC technology (2026-02-17),

15. 12518834 - Adaptive erase pulse to improve memory cell endurance and erase time in non-volatile memory (2026-01-06),

Title: The Innovations of Ming Wang

Introduction

Ming Wang is a prominent inventor based in Shanghai, China, known for his significant contributions to memory device technology. With a total of six patents to his name, he has made remarkable advancements in the field of electronics.

Latest Patents

Ming Wang's latest patents include an "Enhanced bit error rate estimation scan process." This invention involves a memory device with control circuitry designed to perform a broad voltage level range bit error rate estimation scan. This scan identifies an approximate optimal read reference voltage for a first string and subsequently conducts a narrow voltage level range bit error rate estimation scan to determine the optimal read reference voltage for both the first and second strings. The broad scan encompasses a wider range of voltage levels compared to the narrow scan. Another notable patent is the "Simultaneous lower tail verify with upper tail verify." This technology allows a memory system to apply a reference voltage to a word line after applying a program voltage. It senses two sets of memory cells targeted for different data states and determines if the voltage thresholds meet the required targets.

Career Highlights

Ming Wang has worked with notable companies such as SanDisk Technologies Inc. and Delta Electronics (Shanghai) Co., Ltd. His experience in these organizations has contributed to his expertise in memory systems and electronic devices.

Collaborations

Ming Wang has collaborated with talented individuals in his field, including Liang Li and Jiahui Yuan. Their teamwork has fostered innovation and development in various projects.

Conclusion

Ming Wang's contributions to memory device technology through his patents and collaborations highlight his role as a leading inventor in the electronics industry. His work continues to influence advancements in this critical field.