Shanghai, China

Ming Wang

This inventor holds 27 USPTO granted patents and 12 published patent applications and 5 EPO patents, primarily in Non-Volatile Memory. Top assignees: Sandisk Technologies Inc., Basf Coatings Gmbh, Delta Electronics (Shanghai) Co., Ltd. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming Wang. Retrieved from https://idiyas.com/inventor/ming-wang-r6jfndnc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 59.3

 

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2025-2026

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Areas of Expertise:
Read Retry
Error Correction
3D NAND
Memory Devices
Data Retention
Erase Pulse
Performance Improvement
Bit Line Timing
Cell Tracking
Predictive Assessment
Garbage Collection
Memory Endurance
27 patents (USPTO):Explore Patents

Title: The Innovations of Ming Wang

Introduction

Ming Wang is a prominent inventor based in Shanghai, China, known for his significant contributions to memory device technology. With a total of six patents to his name, he has made remarkable advancements in the field of electronics.

Latest Patents

Ming Wang's latest patents include an "Enhanced bit error rate estimation scan process." This invention involves a memory device with control circuitry designed to perform a broad voltage level range bit error rate estimation scan. This scan identifies an approximate optimal read reference voltage for a first string and subsequently conducts a narrow voltage level range bit error rate estimation scan to determine the optimal read reference voltage for both the first and second strings. The broad scan encompasses a wider range of voltage levels compared to the narrow scan. Another notable patent is the "Simultaneous lower tail verify with upper tail verify." This technology allows a memory system to apply a reference voltage to a word line after applying a program voltage. It senses two sets of memory cells targeted for different data states and determines if the voltage thresholds meet the required targets.

Career Highlights

Ming Wang has worked with notable companies such as SanDisk Technologies Inc. and Delta Electronics (Shanghai) Co., Ltd. His experience in these organizations has contributed to his expertise in memory systems and electronic devices.

Collaborations

Ming Wang has collaborated with talented individuals in his field, including Liang Li and Jiahui Yuan. Their teamwork has fostered innovation and development in various projects.

Conclusion

Ming Wang's contributions to memory device technology through his patents and collaborations highlight his role as a leading inventor in the electronics industry. His work continues to influence advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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