The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Nov. 01, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Xuan Tian, Shanghai, CN;

Liang Li, Shanghai, CN;

Ming Wang, Shanghai, CN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/08 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 16/08 (2013.01); G11C 29/022 (2013.01); G11C 16/16 (2013.01);
Abstract

Technology for retrying failed reads of non-volatile memory such as NAND. The memory system retries the failed read using one or more different read techniques than the failed read until the read is successful. The memory system may use different read reference voltages for read retries than the read reference voltages used in the failed read. After a successful read retry the memory system determines whether the original read failed due to an inherent reliability issue or a physical defect. If there is a physical defect the memory cells may be retired. In an embodiment, the entire block of memory cells having the physical defect is retired. However, if the read failed due to an inherent reliability issue then the memory cells may continue to be used.


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