Fremont, CA, United States of America

Weiyi Li

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Weiyi Li: Innovator in Memory Device Technology

Introduction

Weiyi Li is a notable inventor based in Fremont, CA, who has made significant contributions to the field of memory device technology. With a focus on enhancing the efficiency and scalability of memory systems, Li's work has implications for various applications in computing and data storage.

Latest Patents

Weiyi Li holds a patent titled "Enabling significant scaling of wordline switch with wordline dependent negative bitline voltage." This innovative memory device includes a memory block with multiple memory cells arranged in word lines. It features word line switch transistors that are electrically coupled to these word lines, which are grouped into zones based on the size of the associated word line switch transistors. Additionally, the device incorporates a bitline biasing circuit that provides a negative biasing voltage to a bitline corresponding to a memory cell during programming, with the voltage magnitude adjusted according to the zone of the selected word line.

Career Highlights

Li is currently employed at Sandisk Technologies Inc., where he continues to develop cutting-edge memory solutions. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and scalable for modern applications.

Collaborations

Throughout his career, Weiyi Li has collaborated with talented colleagues, including Wei Cao and Dengtao Zhao. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Weiyi Li's contributions to memory device technology exemplify the impact of innovative thinking in the field of electronics. His patent and ongoing work at Sandisk Technologies Inc. highlight his commitment to advancing memory solutions for the future.

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