Variable fast look neighbor ahead to improve read accuracy

Abstract

A memory apparatus includes memory cells connected to word lines and configured to retain a threshold voltage corresponding to data states. A control means is configured to determine ones of the data states for the memory cells of a neighboring word line adjacent to a selected word line in a pre-read. The control means determines an adjusted sense time according to a zone identified for the memory cells of the neighboring word line and the one of the data states targeted for the memory cells of the selected word line and a temperature of the memory apparatus. The control means is also configured to perform reads on the selected word line for each of a plurality of groupings of ones of the data states in a read operation using the adjusted sense time determined for each of the memory cells of the selected word line.