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For the Inventor, By the Inventor

Mesa, AZ, United States of America

William J Dauksher

This inventor holds 26 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Lithography Techniques. Top assignees: Motorola Corporation, Freescale Semiconductor,inc., Applied Materials, Inc.. Active years: 1993-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William J Dauksher. Retrieved from https://idiyas.com/inventor/william-j-dauksher

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 73.1

 

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 1,015(Granted Patents)


Company Filing History:

goldMedal19 out of 20,290 
 
Motorola Corporation
 patents
silverMedal5 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal1 out of 14,433 
 
Applied Materials, Inc.
 patents
4. 1 out of 2,958 
 
Motorola Mobility LLC
 patents
5. 1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 1993-2012

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Areas of Expertise:
Lithographic Template
Thin Film Batteries
Etching Process
Semiconductor Device
Plasma Etch
Mask Formation
X-ray Mask
Manufacturing Method
Nanoemissive Displays
Hard Mask
Substrate Processing
Endpoint Detection
26 patents (USPTO):Explore Patents
1. 8198705 - Ultra-thin die and method of fabricating same (2012-06-12),
2. 8168318 - Method for high volume manufacturing of thin film batteries (2012-05-01),
3. 7507638 - Ultra-thin die and method of fabricating same (2009-03-24),
4. 7432024 - Lithographic template and method of formation and use (2008-10-07),
5. 7425392 - Lithographic template and method of formation and use (2008-09-16),
6. 7413924 - Plasma etch process for defining catalyst pads on nanoemissive displays (2008-08-19),
7. 7163888 - Direct imprinting of etch barriers using step and flash imprint lithography (2007-01-16),
8. 7125796 - Plasma etch process for multilayer vias having an organic layer with vertical sidewalls (2006-10-24),
9. 7083880 - Lithographic template and method of formation and use (2006-08-01),
10. 7063919 - Lithographic template having a repaired gap defect method of repair and use (2006-06-20),
11. 6797440 - Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device (2004-09-28),
12. 6580172 - Lithographic template and method of formation and use (2003-06-17),
13. 6387787 - Lithographic template and method of formation and use (2002-05-14),
14. 6368752 - Low stress hard mask formation method during refractory radiation mask fabrication (2002-04-09),
15. 6355384 - Mask, its method of formation, and a semiconductor device made thereby (2002-03-12),

Title: The Innovative Journey of William J Dauksher

Introduction:

William J Dauksher, a talented inventor based in Mesa, AZ, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

William J Dauksher holds several patents in various technological domains, including advancements in renewable energy systems, smart home devices, and medical equipment.

Career Highlights:

With a career spanning over two decades, William J Dauksher has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has not only revolutionized industries but has also improved the quality of life for many individuals around the world.

Collaborations:

Throughout his career, William J Dauksher has collaborated with leading technology companies, research institutions, and universities to further enhance his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

In conclusion, William J Dauksher's passion for innovation, coupled with his technical expertise, has solidified his position as a respected inventor in the technology sector. His relentless pursuit of excellence continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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