The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7125796 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 24, 2006

Filed:

Nov. 30, 2004
Applicants:

Donald F. Weston, Phoenix, AZ (US);

William J. Dauksher, Mesa, AZ (US);

Ngoc V. Le, Gilbert, AZ (US);

Inventors:

Donald F. Weston, Phoenix, AZ (US);

William J. Dauksher, Mesa, AZ (US);

Ngoc V. Le, Gilbert, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process is provided for fabricating a viabetween bonded wafers without undercutting an organic bonding material. The process for forming the viain a structure including a dielectric materialand an organic bonding material, comprises forming a resist materialon the dielectric layerand etching through the dielectric layerand the organic bonding materialwith 60CF/20Ar/60CHF/20N. The resist may then be removed with an anisotropic high density oxygen plasma.


Find Patent Forward Citations

Weston, Donald. (2006). Plasma etch process for multilayer vias having an organic layer with vertical sidewalls (U.S. Patent No. 7125796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7125796

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…