The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Mar. 02, 2001
David P. Mancini, Fountain Hills, AZ (US);
Doug J. Resnick, Phoenix, AZ (US);
William J. Dauksher, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( ) is formed having a substrate ( ), an optional etch stop layer ( ) formed on a surface ( ) of the substrate ( ), and a patterning layer ( ) formed on a surface ( ) of the etch stop layer ( ). The template ( ) is used in the fabrication of a semiconductor device ( ) for affecting a pattern in device ( ) by positioning the template ( ) in close proximity to semiconductor device ( ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template ( ) is then removed to complete fabrication of semiconductor device ( ).