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For the Inventor, By the Inventor

Shanghai, China

Wenjun Li

This inventor holds 29 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Alpha Omega Semiconductor Inc., Alpha and Omega Semiconductor (Cayman) Ltd., Alpha and Omega Semiconductor International LP. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenjun Li. Retrieved from https://idiyas.com/inventor/wenjun-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29 

% Patents Active = 96.6

 

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 128(Granted Patents)


Location History:

  • Songjian, CN (2018)
  • Shanghai, CN (2012 - 2020)
  • Portland, OR (US) (2016 - 2023)

Company Filing History:

goldMedal20 out of 753 
 
Alpha Omega Semiconductor Inc.
 patents
silverMedal5 out of 132 
 
Alpha and Omega Semiconductor (Cayman) Ltd.
 patents
bronzeMedal2 out of 79 
 
Alpha and Omega Semiconductor International LP
 patents
4. 1 out of 2,022 
 
Aktiebolaget Skf
 patents
5. 1 out of 1 
 
Alpha and Omage Semiconductor Inc.
 patent
6. 1 out of 6 
 
Skf (China) Co Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:
MOSFET
Power Devices
Trench Technology
Epitaxial Layer
IGBT
Self-Aligned Processes
Vibration Signals
High Voltage
Electrical Contacts
Split-Gate
Shielded Gate
Aspect Ratio
29 patents (USPTO):Explore Patents
1. 12741682 - Train speed estimation device and method based on vibration signals (2026-09-22),
2. 11749716 - Semiconductor device incorporating epitaxial layer field stop zone (2023-09-05),
3. 11728423 - Integrated planar-trench gate power MOSFET (2023-08-15),
4. 11569345 - Gas dopant doped deep trench super junction high voltage MOSFET (2023-01-31),
5. 11101137 - Method of making reverse conducting insulated gate bipolar transistor (2021-08-24),
6. 11031465 - Semiconductor device incorporating epitaxial layer field stop zone (2021-06-08),
7. 10686038 - Reverse conducting IGBT incorporating epitaxial layer field stop zone (2020-06-16),
8. 10680097 - MOSFET device and fabrication (2020-06-09),
9. 10644118 - Self-aligned contact for trench power MOSFET (2020-05-05),
10. 10608092 - Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts (2020-03-31),
11. 10424654 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2019-09-24),
12. 10170559 - Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method (2019-01-01),
13. 10020380 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2018-07-10),
14. 10014381 - Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts (2018-07-03),
15. 9865694 - Split-gate trench power mosfet with protected shield oxide (2018-01-09),

Title: Inventor Wenjun Li - Revolutionizing Technology in Shanghai

Introduction: Wenjun Li is a pioneering inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wenjun Li holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Wenjun Li has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Wenjun Li has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the tech sector.

Conclusion: Wenjun Li's relentless pursuit of innovation and his passion for creating transformative technologies continue to inspire the next generation of inventors and shape the future of technology in Shanghai and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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