IDiyas

For the Inventor, By the Inventor

Shanghai, China

Wenjun Li

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 5.8

ph-index = 6

Forward Citations = 120(Granted Patents)


Location History:

  • Songjian, CN (2018)
  • Shanghai, CN (2012 - 2020)
  • Portland, OR (US) (2016 - 2023)

Company Filing History:

goldMedal20 out of 749 
 
Alpha & Omega Semiconductor Corporation
 patents
silverMedal5 out of 132 
 
Alpha and Omega Semiconductor (cayman) Ltd.
 patents
bronzeMedal2 out of 59 
 
Alpha and Omega Semiconductor International LP
 patents
4. 1 out of 1 
 
Alpha and Omage Semiconductor Inc.
 patent

Years Active: 2012-2023

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28 patents (USPTO):
1. 11749716 - Semiconductor device incorporating epitaxial layer field stop zone (2023-09-05),
2. 11728423 - Integrated planar-trench gate power MOSFET (2023-08-15),
3. 11569345 - Gas dopant doped deep trench super junction high voltage MOSFET (2023-01-31),
4. 11101137 - Method of making reverse conducting insulated gate bipolar transistor (2021-08-24),
5. 11031465 - Semiconductor device incorporating epitaxial layer field stop zone (2021-06-08),
6. 10686038 - Reverse conducting IGBT incorporating epitaxial layer field stop zone (2020-06-16),
7. 10680097 - MOSFET device and fabrication (2020-06-09),
8. 10644118 - Self-aligned contact for trench power MOSFET (2020-05-05),
9. 10608092 - Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts (2020-03-31),
10. 10424654 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2019-09-24),
11. 10170559 - Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method (2019-01-01),
12. 10020380 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2018-07-10),
13. 10014381 - Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts (2018-07-03),
14. 9865694 - Split-gate trench power mosfet with protected shield oxide (2018-01-09),
15. 9793393 - MOSFET device and fabrication (2017-10-17),

Title: Inventor Wenjun Li - Revolutionizing Technology in Shanghai

Introduction: Wenjun Li is a pioneering inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wenjun Li holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Wenjun Li has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Wenjun Li has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the tech sector.

Conclusion: Wenjun Li's relentless pursuit of innovation and his passion for creating transformative technologies continue to inspire the next generation of inventors and shape the future of technology in Shanghai and beyond.

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