The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jun. 14, 2017
Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Hongyong Xue, Portland, OR (US);

Sik Lui, Sunnyvale, CA (US);

Terence Huang, Portland, OR (US);

Ching-Kai Lin, Hillsboro, OR (US);

Wenjun Li, Portland, OR (US);

Yi Chang Yang, Portland, OR (US);

Jowei Dun, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/42368 (2013.01);
Abstract

Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.


Find Patent Forward Citations

Loading…