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For the Inventor, By the Inventor

Portland, OR, United States of America

Hongyong Xue

This inventor holds 16 USPTO granted patents and 2 published patent applications. Top assignees: Alpha and Omega Semiconductor (Cayman) Ltd., Alpha Omega Semiconductor Inc., Alpha and Omage Semiconductor Inc.. Active years: 2005-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongyong Xue. Retrieved from https://idiyas.com/inventor/hongyong-xue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 5.8

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2019)
  • Hillsboro, CA (US) (2020)
  • Portland, OR (US) (2005 - 2023)

Company Filing History:

goldMedal7 out of 132 
 
Alpha and Omega Semiconductor (Cayman) Ltd.
 patents
silverMedal6 out of 753 
 
Alpha Omega Semiconductor Inc.
 patents
bronzeMedal1 out of 1 
 
Alpha and Omage Semiconductor Inc.
 patent
4. 1 out of 77 
 
Alpha and Omega Semiconductor International LP
 patents
5. 1 out of 1,264 
 
Integrated Device Technology, Inc.
 patents

Years Active: 2005-2023

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16 patents (USPTO):Explore Patents
1. 11749716 - Semiconductor device incorporating epitaxial layer field stop zone (2023-09-05),
2. 11699627 - DMOS FET chip scale package and method of making the same (2023-07-11),
3. 11031465 - Semiconductor device incorporating epitaxial layer field stop zone (2021-06-08),
4. 10833021 - Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer (2020-11-10),
5. 10763125 - Semiconductor device having one or more titanium interlayers and method of making the same (2020-09-01),
6. 10686038 - Reverse conducting IGBT incorporating epitaxial layer field stop zone (2020-06-16),
7. 10644118 - Self-aligned contact for trench power MOSFET (2020-05-05),
8. 10438813 - Semiconductor device having one or more titanium interlayers and method of making the same (2019-10-08),
9. 10424654 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2019-09-24),
10. 10170559 - Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method (2019-01-01),
11. 10020380 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2018-07-10),
12. 9865694 - Split-gate trench power mosfet with protected shield oxide (2018-01-09),
13. 9741808 - Split-gate trench power MOSFET with protected shield oxide (2017-08-22),
14. 9691863 - Self-aligned contact for trench power MOSFET (2017-06-27),
15. 9281368 - Split-gate trench power MOSFET with protected shield oxide (2016-03-08),

Title: Inventor Hongyong Xue: Pioneering Innovations in Portland

Introduction: Hongyong Xue is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to various technological fields.

Latest Patents: Xue holds several patents in the areas of renewable energy, sustainable materials, and smart home technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a background in engineering and a passion for problem-solving, Xue has led numerous successful projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Xue has collaborated with leading research institutions, universities, and innovative companies to bring his ideas to life and make a lasting impact on society.

Conclusion: Hongyong Xue's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the landscape of technology in Portland and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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