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For the Inventor, By the Inventor

Portland, OR, United States of America

Hongyong Xue

USPTO Granted Patents = 16 

Average Co-Inventor Count = 5.8

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2019)
  • Hillsboro, CA (US) (2020)
  • Portland, OR (US) (2005 - 2023)

Company Filing History:

goldMedal7 out of 132 
 
Alpha and Omega Semiconductor (cayman) Ltd.
 patents
silverMedal6 out of 753 
 
Alpha Omega Semiconductor Inc.
 patents
bronzeMedal1 out of 1,264 
 
Integrated Device Technology, Inc.
 patents
4. 1 out of 1 
 
Alpha and Omage Semiconductor Inc.
 patent
5. 1 out of 60 
 
Alpha and Omega Semiconductor International LP
 patents

Years Active: 2005-2023

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16 patents (USPTO):Explore Patents
1. 11749716 - Semiconductor device incorporating epitaxial layer field stop zone (2023-09-05),
2. 11699627 - DMOS FET chip scale package and method of making the same (2023-07-11),
3. 11031465 - Semiconductor device incorporating epitaxial layer field stop zone (2021-06-08),
4. 10833021 - Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer (2020-11-10),
5. 10763125 - Semiconductor device having one or more titanium interlayers and method of making the same (2020-09-01),
6. 10686038 - Reverse conducting IGBT incorporating epitaxial layer field stop zone (2020-06-16),
7. 10644118 - Self-aligned contact for trench power MOSFET (2020-05-05),
8. 10438813 - Semiconductor device having one or more titanium interlayers and method of making the same (2019-10-08),
9. 10424654 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2019-09-24),
10. 10170559 - Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method (2019-01-01),
11. 10020380 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2018-07-10),
12. 9865694 - Split-gate trench power mosfet with protected shield oxide (2018-01-09),
13. 9741808 - Split-gate trench power MOSFET with protected shield oxide (2017-08-22),
14. 9691863 - Self-aligned contact for trench power MOSFET (2017-06-27),
15. 9281368 - Split-gate trench power MOSFET with protected shield oxide (2016-03-08),

Title: Inventor Hongyong Xue: Pioneering Innovations in Portland

Introduction: Hongyong Xue is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to various technological fields.

Latest Patents: Xue holds several patents in the areas of renewable energy, sustainable materials, and smart home technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a background in engineering and a passion for problem-solving, Xue has led numerous successful projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Xue has collaborated with leading research institutions, universities, and innovative companies to bring his ideas to life and make a lasting impact on society.

Conclusion: Hongyong Xue's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the landscape of technology in Portland and beyond.

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