The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Jun. 14, 2018
Applicant:

Alpha and Omega Semiconductor (Cayman) Ltd., Grand Cayman, KY;

Inventors:

Lei Zhang, Portland, OR (US);

Hongyong Xue, Portland, OR (US);

Jian Wang, Portland, OR (US);

Runtao Ning, Hillsboro, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/304 (2006.01); H01L 21/265 (2006.01); H01L 21/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/67282 (2013.01); H01L 21/6835 (2013.01); H01L 21/265 (2013.01); H01L 21/304 (2013.01); H01L 21/78 (2013.01); H01L 29/66325 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68309 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract

A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.


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