The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Feb. 26, 2021
Alpha and Omega Semiconductor International Lp, Toronto, CA;
Yan Xun Xue, Los Gatos, CA (US);
Long-Ching Wang, Cupertino, CA (US);
Hongyong Xue, Portland, OR (US);
Madhur Bobde, Sunnyvale, CA (US);
Zhiqiang Niu, Santa Clara, CA (US);
Jun Lu, San Jose, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto, CA;
Abstract
A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.