Terence Huang

Title: Terence Huang: Innovator in Power MOSFET Technology

Introduction

Terence Huang is a prominent inventor based in Portland, OR (US), known for his significant contributions to the field of power MOSFET technology. With a total of five patents to his name, Huang has made notable advancements that enhance the efficiency and performance of semiconductor devices.

Latest Patents

Huang's latest patents include innovative designs such as the "Self-aligned contact for trench power MOSFET." This invention provides a self-aligned contact for a trench power MOSFET device, featuring a layer of nitride or oxide over the conductive material in the gate trenches. This design aims to improve the functionality and reliability of the device. Another significant patent is the "Split-gate trench power MOSFET with protected shield oxide." This patent describes a semiconductor substrate with multiple gate trenches and insulating layers that enhance the performance of the MOSFET by ensuring effective separation of conductive materials.

Career Highlights

Throughout his career, Terence Huang has worked with notable companies, including Alpha & Omega Semiconductor Corporation and Alpha and Omega Semiconductor Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Huang has collaborated with esteemed colleagues such as Hongyong Xue and Wenjun Li, contributing to the advancement of technology in the semiconductor industry.

Conclusion

Terence Huang's work in power MOSFET technology exemplifies his commitment to innovation and excellence. His patents reflect a deep understanding of semiconductor design, making him a valuable contributor to the field.