Alpha & Omega Semiconductor Corporation

Alpha and Omage Semiconductor Inc.

Terence Huang

Wenjun Li

Hongyong Xue

Hamza Yilmaz

Madhur Bobde

Lingpeng Guan

Hong Chang

Yeeheng Lee

Paul Thorup

Yiming Gu

Yang Xiang

Sekar Ramamoorthy

Sik Lui

Jowei Dun

Ching-Kai Lin

Yi Chang Yang

Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Self-aligned contact for trench power MOSFET

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Split-gate trench power mosfet with protected shield oxide

Split-gate trench power MOSFET with protected shield oxide

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Portland, OR, United States of America

Terence Huang