San Jose, CA, United States of America

Jowei Dun


Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 588(Granted Patents)


Location History:

  • Pao-Shan Hsiang, TW (2001)
  • Hsin-Chu, TW (2000 - 2002)
  • San Jose, CA (US) (1994 - 2020)

Company Filing History:


Years Active: 1994-2020

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17 patents (USPTO):

Title: Jowei Dun: Innovator in Semiconductor Technology

Introduction

Jowei Dun is a prominent inventor based in San Jose, CA, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Dun has made remarkable advancements in the field, particularly in power MOSFET devices.

Latest Patents

Among his latest patents is the invention of a self-aligned contact for trench power MOSFET. This device features a layer of nitride over the conductive material in the gate trenches, enhancing the performance of the MOSFET. Another notable patent is for a power device with high aspect ratio trench contacts and submicron pitches between trenches. This invention includes a semiconductor power device with a plurality of gate trenches formed in the active cell area, which improves the efficiency and functionality of semiconductor devices.

Career Highlights

Dun has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company and Siliconix Incorporated. His experience in these organizations has allowed him to develop innovative solutions that address the challenges faced in semiconductor manufacturing.

Collaborations

Throughout his career, Jowei Dun has collaborated with notable professionals in the field, including Ying-Lang Wang and Fwu-Iuan Hshieh. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Jowei Dun's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of efficient and advanced semiconductor devices.

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