The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Apr. 22, 2021
Alpha and Omega Semiconductor International Lp, Toronto, CA;
Wenjun Li, Portland, OR (US);
Lingpeng Guan, San Jose, CA (US);
Jian Wang, Portland, OR (US);
Lingbing Chen, Portland, OR (US);
ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto, CA;
Abstract
Transistor device and method of making thereof comprising a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type on top of the substrate. A body region doped with a second conductivity type is formed in the epitaxial layer wherein the second conductivity type is opposite the first conductivity type and a source region doped with the first conductivity type is formed in the body region of the epitaxial layer. An integrated planar-trench gate having a planar gate portion is formed on the surface of the epitaxial layer that is contiguous with a gate trench portion formed in the epitaxial layer.