The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Sep. 08, 2017
Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

John Chen, Palo Alto, CA (US);

Il Kwan Lee, San Ramon, CA (US);

Hong Chang, Cupertino, CA (US);

Wenjun Li, Shanghai, CN;

Anup Bhalla, Santa Clara, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/42372 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01);
Abstract

A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; and a body region in the substrate.


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