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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Pin Lu

USPTO Granted Patents = 20

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 281(Granted Patents)


Location History:

  • Yi-Lan, TW (2002 - 2004)
  • I-Lan, TW (2002 - 2007)
  • Chupei, TW (2013)
  • Hsinchu, TW (2006 - 2016)
  • Hsinchu County, TW (2016 - 2017)

Company Filing History:

goldMedal20 out of 3,595 
 
Macronix International Co., Ltd.
 patents

Years Active: 2002-2017

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20 patents (USPTO):Explore Patents
1. 9589982 - Structure and method of operation for improved gate capacity for 3D NOR flash memory (2017-03-07),
2. 9524784 - Device and method for improved threshold voltage distribution for non-volatile memory (2016-12-20),
3. 9437612 - Three-dimensional memory (2016-09-06),
4. 8466508 - Non-volatile memory structure including stress material between stacked patterns (2013-06-18),
5. 8466064 - Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device (2013-06-18),
6. 8451641 - Memory array no common source region and method of fabricating the same (2013-05-28),
7. 8243489 - Memory device no common source region and method of fabricating the same (2012-08-14),
8. 7924591 - Memory device with shielding plugs adjacent to a dummy word line thereof (2011-04-12),
9. 7847336 - Method of fabricating NAND-type flash EEPROMS without field oxide isolation (2010-12-07),
10. 7776690 - Method of forming a contact on a semiconductor device (2010-08-17),
11. 7399674 - Method of fabricating NAND-type flash EEPROM without field oxide isolation (2008-07-15),
12. 7214983 - Non-volatile memory and fabricating method thereof (2007-05-08),
13. 7157360 - Memory device and method for forming a passivation layer thereon (2007-01-02),
14. 7116606 - Method and circuit of plasma damage protection (2006-10-03),
15. 7012004 - Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof (2006-03-14),

Title: Innovations by Wen-Pin Lu: Pioneering Advances in Non-Volatile Memory Technology

Introduction

Wen-Pin Lu is an esteemed inventor based in Hsinchu, Taiwan, who has made significant contributions to the field of non-volatile memory technology. With a remarkable portfolio boasting 20 patents, Lu's work focuses on improving the performance and efficiency of memory devices, particularly in 3D NOR flash memory.

Latest Patents

Among his latest patents, Lu has developed a structure and method of operation for improved gate capacity for 3D NOR flash memory. This innovation enhances three-dimensional memory cells and arrays, providing a new architecture for memory devices. The design includes a first conductive layer, a third conductive layer spaced apart, and a channel conductive layer that connects them, forming an innovative staircase structure with a dielectric layer.

Additionally, Lu’s patent for a device and method aimed at improving threshold voltage distribution in non-volatile memory is noteworthy. This invention details a method for controlling voltage distribution in memory cells, which involves applying distinct function voltages to different cells, enhancing the operational efficiency of non-volatile memory devices.

Career Highlights

Wen-Pin Lu's career is marked by his pivotal role at Macronix International Co., Ltd., where he has been instrumental in advancing memory technology. His extensive research contributions and patent filings underscore his commitment to innovation in the semiconductor industry.

Collaborations

Lu works alongside distinguished professionals such as Ming-Shang Chen and Hung-Yu Chiu. Their collaborative efforts have led to significant advancements in memory technologies, positioning their team at the forefront of innovation within the industry.

Conclusion

In conclusion, Wen-Pin Lu’s innovative contributions to memory technology have not only earned him recognition through multiple patents but have also paved the way for advancements in non-volatile memory systems. His ongoing work at Macronix International Co., Ltd. highlights his dedication to pushing the boundaries of what is possible in digital memory solutions.

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