The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Sep. 09, 2015
Applicant:

Macronix International Co., Ltd., Hsin-Chu, TW;

Inventors:

Cheng-Hsien Cheng, Yunlin County, TW;

Chih-Wei Lee, New Taipei, TW;

Shaw-Hung Ku, Hsinchu, TW;

Wen-Pin Lu, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11578 (2013.01);
Abstract

The present invention provides methods and associated devices for controlling the voltage threshold distribution corresponding to performing a function on cells of non-volatile memory device. In one embodiment, a method is provided. The method may comprise providing the non-volatile memory device. The device comprises one or more strings, each string comprising a plurality of cells, the plurality of cells comprising a first cell and a second cell. The method further comprises performing a function of the non-volatile memory device by applying a first function voltage to the first cell and a second function voltage to the second cell. The first function voltage and the second function voltage are different.


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