The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
May. 13, 2005
U-way Tseng, Taichung, TW;
Hung-yu Chiu, Kaohsiung, TW;
Wen-pin LU, Ilan, TW;
Pao-ling Hwang, Hsinchu, TW;
U-Way Tseng, Taichung, TW;
Hung-Yu Chiu, Kaohsiung, TW;
Wen-Pin Lu, Ilan, TW;
Pao-Ling Hwang, Hsinchu, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof. A gate structure is formed on a substrate. Diffusion regions are formed in the substrate on either side of the gate structure. A linear oxide layer is formed on the gate structure and the substrate. A conformal nitride layer is formed on the linear oxide layer. The nitride layer and the linear oxide layer are partially etched back to form linear oxide spacers on the sides of the gate structure and nitride spacers on the sides of the linear oxide spacers. A conformal oxide layer is formed on the linear oxide spacers, the nitride spacers, the gate structure and the substrate. The oxide layer is partially etched back to form oxide spacers on the sides of the nitride spacers.