Kaohsiung, Taiwan

Hung-Yu Chiu

This inventor holds 10 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2003-2007.


% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 47(Granted Patents)


Location History:

  • Hsinchu, TW (2005)
  • Kaohsiung, TW (2003 - 2007)

Company Filing History:


Years Active: 2003-2007

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10 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung-Yu Chiu

Introduction

Hung-Yu Chiu is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 10 patents. His work focuses on improving the structures and manufacturing methods of nonvolatile memory cells.

Latest Patents

One of his latest patents is titled "Memory device and method for forming a passivation layer thereon." This invention features a memory device with an enhanced passivation structure, which includes a semiconductor substrate with memory units, an interconnect structure, and a passivation structure comprising a dielectric layer and a silicon-oxy-nitride (SiOxNy) layer. Another notable patent is "Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof." This method involves forming a gate structure on a substrate, creating diffusion regions, and utilizing a series of oxide and nitride layers to develop a sophisticated memory cell structure.

Career Highlights

Hung-Yu Chiu is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His expertise has led to advancements that enhance the performance and reliability of memory devices.

Collaborations

He has collaborated with notable coworkers such as Wen-Pin Lu and Uway Tseng, contributing to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Hung-Yu Chiu's contributions to memory device technology are significant, and his patents reflect his innovative spirit and dedication to advancing the field. His work continues to influence the development of more efficient and reliable memory solutions.

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