The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Mar. 19, 2003
Fu-hsiang Hsu, Keelung, TW;
U-way Tseng, Taichung, TW;
Hung-yu Chiu, Kaohsiung, TW;
Shih-liang Chou, Pingtung, TW;
Shin-yi Chou, Hsinchu, TW;
Fu-Hsiang Hsu, Keelung, TW;
U-Way Tseng, Taichung, TW;
Hung-Yu Chiu, Kaohsiung, TW;
Shih-Liang Chou, Pingtung, TW;
Shin-Yi Chou, Hsinchu, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A method of forming an intermetal dielectric (IMD) layer. At least one metal wire is formed on a substrate. A filling oxide layer is formed on the substrate and the metal wire. The surface of the filling oxide layer is smoothed. A first silicon-rich oxide layer is formed on the filling oxide layer, where the refractive index (RI) of the first silicon-rich oxide layer is 1.6˜1.64. A second silicon-rich oxide layer is formed on the first silicon-rich oxide layer, where the refractive index of the second silicon-rich oxide layer is 1.49˜1.55. According to the present method, the diffusion of mobile hydrogen ions is blocked by manufacture with dual silicon-rich oxide layers.