Company Filing History:
Years Active: 2005-2007
Title: Fu-Hsiang Hsu: Innovator in Memory Device Technology
Introduction
Fu-Hsiang Hsu is a notable inventor based in Keelung, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work focuses on improving the structures and methods used in semiconductor technology.
Latest Patents
One of his latest patents is titled "Memory device and method for forming a passivation layer thereon." This invention features a memory device with an enhanced passivation structure. The device includes a semiconductor substrate with memory units, an interconnect structure, and a passivation structure that comprises a dielectric layer and a silicon-oxy-nitride (SiOxNy) layer. Another significant patent is the "Method of forming an intermetal dielectric layer." This method involves forming a filling oxide layer on a substrate and metal wire, followed by the creation of dual silicon-rich oxide layers to block the diffusion of mobile hydrogen ions.
Career Highlights
Fu-Hsiang Hsu is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory devices. His work has been instrumental in advancing semiconductor technology and improving device performance.
Collaborations
He has collaborated with notable coworkers, including U-Way Tseng and Hung-Yu Chiu, contributing to various projects and innovations in the industry.
Conclusion
Fu-Hsiang Hsu's contributions to memory device technology highlight his role as a leading inventor in the semiconductor field. His innovative patents and ongoing work at Macronix International Co., Ltd. continue to shape the future of memory devices.