Macronix International Co., Ltd.

Fu-Hsiang Hsu

Hung-Yu Chiu

U-Way Tseng

Pei-Ren Jeng

Wen-Pin Lu

Cheng-Chen Huseh

Shih-Liang Chou

Shin-Yi Chou

A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.

Memory device and method for forming a passivation layer thereon

A method of forming an intermetal dielectric (IMD) layer. At least one metal wire is formed on a substrate. A filling oxide layer is formed on the substrate and the metal wire. The surface of the filling oxide layer is smoothed. A first silicon-rich oxide layer is formed on the filling oxide layer, where the refractive index (RI) of the first silicon-rich oxide layer is 1.6&#x2dc;1.64. A second silicon-rich oxide layer is formed on the first silicon-rich oxide layer, where the refractive index of the second silicon-rich oxide layer is 1.49&#x2dc;1.55. According to the present method, the diffusion of mobile hydrogen ions is blocked by manufacture with dual silicon-rich oxide layers.

Method of forming an intermetal dielectric layer

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Keelung, Taiwan

Fu-Hsiang Hsu