The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Sep. 04, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of eliminating weakness caused by high-density plasma (HDP) dielectric layer is provided. Before forming the HDP dielectric layer, a hot thermal oxide (HTO) layer is previously formed on the semiconductor substrate to serve as a buffer layer. The HTO layer eliminates the defect between the HDP dielectric layer and a cap nitride layer and releases the stress therebetween, and thereby preventing bit line leakage issue.
Chiu, Hung-Yu. (2003). Method of eliminating weakness caused by high density plasma dielectric layer (U.S. Patent No. 6521518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6521518
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