The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Nov. 24, 2004
Tzung-ting Han, Yilan County, TW;
Ming-shang Chen, Hsinchu, TW;
Wen-pin LU, Hsinchu, TW;
Meng-hsuan Weng, Hsinchu, TW;
Tzung-Ting Han, Yilan County, TW;
Ming-Shang Chen, Hsinchu, TW;
Wen-Pin Lu, Hsinchu, TW;
Meng-Hsuan Weng, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinhcu, TW;
Abstract
A method of fabricating a non-volatile memory is provided. A plurality of stack gate strips is formed on a substrate and a plurality of source/drain regions is formed in the substrate beside the stack gate strips. A plurality of dielectric strips is formed on the source/drain regions. A plurality of word lines is formed on the stack gate strips and the dielectric strips. Thereafter, the stack gate strips exposed by the word lines are removed to form a plurality of openings. A plurality of spacers is formed on the sidewalls of the openings and the word lines. A dielectric layer is formed over the substrate. A plurality of contacts is formed in the dielectric layer and the dielectric strips between two adjacent word lines.