The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Mar. 27, 2007
Tzung-ting Han, Hsinchu, TW;
Ming-shang Chen, Hsinchu, TW;
Wen-pin LU, Hsinchu, TW;
Meng-hsuan Weng, Hsinchu, TW;
Tzung-Ting Han, Hsinchu, TW;
Ming-Shang Chen, Hsinchu, TW;
Wen-Pin Lu, Hsinchu, TW;
Meng-Hsuan Weng, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a contact on a semiconductor device is provided. First, a substrate is provided. A plurality of gate structures defined by a plurality of word lines in a first direction, and a plurality of diffusion regions covered by a first dielectric layer in a second direction are provided over the substrate. The gate structures located underneath the word lines and isolated by the diffusion regions. Then, an etching stop layer is formed. The etching stop layer and the first dielectric layer have different etching selectivity. A second dielectric layer is formed over the substrate. Furthermore, a plurality of contact holes to the diffusion regions between the word lines are formed by using the etching stop layer as a self-aligned mask.