The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Jan. 14, 2005
Applicants:
Ming-hung Chou, Hsinchu, TW;
Wen-pin LU, Hsinchu, TW;
Inventors:
Ming-Hung Chou, Hsinchu, TW;
Wen-Pin Lu, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A protection circuit to discharge plasma-induced charges in a semiconductor device or integrated circuit includes a PMOS transistor and a diode. The PMOS transistor includes a substrate, a drain, a source, and a gate, the source being coupled to receive the plasma-induced charges. The diode has a positive terminal coupled to the substrate of the PMOS transistor and a negative terminal coupled the gate of the PMOS transistor.
Quick Actions:
Chou, Ming-Hung. (2006). Method and circuit of plasma damage protection (U.S. Patent No. 7116606). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7116606
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile