The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Oct. 03, 2007
Shaw-hung Ku, Hsinchu, TW;
Shih-chin Lee, Hsinchu, TW;
Chia-wei Wu, Hsinchu, TW;
Shang-wei Lin, Hsinchu, TW;
Tzung-ting Han, Hsinchu, TW;
Ming-shang Chen, Hsinchu, TW;
Wen-pin LU, Hsinchu, TW;
Shaw-Hung Ku, Hsinchu, TW;
Shih-Chin Lee, Hsinchu, TW;
Chia-Wei Wu, Hsinchu, TW;
Shang-Wei Lin, Hsinchu, TW;
Tzung-Ting Han, Hsinchu, TW;
Ming-Shang Chen, Hsinchu, TW;
Wen-Pin Lu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A non-volatile memory structure including a substrate, stacked patterns and stress patterns is provided. The stacked patterns are disposed on the substrate. Each of the stacked patterns includes a charge storage structure and a gate from bottom to top. Here, the charge storage structure at least includes a charge storage layer. The stress patterns are disposed on the substrate between the two adjacent stacked patterns, respectively.