Hsinchu, Taiwan

Shang-Wei Lin


Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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2 patents (USPTO):Explore Patents

Title: Innovations of Shang-Wei Lin

Introduction

Shang-Wei Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on advancing non-volatile memory structures, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is a memory device that includes a substrate, a conductive layer, a charge storage layer, first and second dopant regions, and first and second cell dopant regions. This innovative design features a plurality of trenches deployed in the substrate, with the conductive layer filling these trenches. The charge storage layer is strategically placed between the substrate and the conductive layer, enhancing the device's efficiency. The first and second dopant regions, configured in the substrate, play a vital role in the functionality of the memory device.

Another significant patent by Shang-Wei Lin is a non-volatile memory structure that incorporates stress material between stacked patterns. This structure consists of a substrate, stacked patterns, and stress patterns. Each stacked pattern includes a charge storage structure and a gate, with the charge storage layer being a key component. The stress patterns are positioned on the substrate between adjacent stacked patterns, contributing to the overall performance of the memory structure.

Career Highlights

Shang-Wei Lin is currently employed at Macronix International Co., Ltd., a company known for its advancements in memory technology. His work at Macronix has allowed him to push the boundaries of memory device innovation, making significant strides in the industry.

Collaborations

Throughout his career, Shang-Wei Lin has collaborated with talented individuals such as Yu-Fong Huang and I-Shen Tsai. These collaborations have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Shang-Wei Lin's contributions to the field of memory devices are noteworthy, with his innovative patents paving the way for future advancements. His work continues to impact the technology landscape significantly.

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