The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 15, 2010
Yu-fong Huang, Hsinchu, TW;
I-shen Tsai, Hsinchu, TW;
Shang-wei Lin, Hsinchu, TW;
Miao-chih Hsu, Hsinchu, TW;
Kuan-fu Chen, Hsinchu, TW;
Yu-Fong Huang, Hsinchu, TW;
I-Shen Tsai, Hsinchu, TW;
Shang-Wei Lin, Hsinchu, TW;
Miao-Chih Hsu, Hsinchu, TW;
Kuan-Fu Chen, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory device including a substrate, a conductive layer, a charge storage layer, first and second dopant regions and first and second cell dopant regions is provided. A plurality of trenches is deployed in the substrate. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layer is disposed between the substrate and the conductive layer. The first and second dopant regions having a first conductive type are configured in the substrate under bottoms of the trenches and in an upper portion of the substrate between two adjacent trenches, respectively. The first and second cell dopant regions having a second conductive type are configured in the substrate between lower portions of side surfaces of the trenches and in the substrate adjacent to the bottoms of the second dopant regions, respectively. The first and the second conductive types are different dopant types.