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For the Inventor, By the Inventor

Taoyuan, Taiwan

Wei-Ming Liao

USPTO Granted Patents = 28 

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 32(Granted Patents)


Location History:

  • Taipei, TW (2010 - 2011)
  • Taoyuan County, TW (2012 - 2016)
  • Taoyuan, TW (2016 - 2024)

Company Filing History:

goldMedal28 out of 2,305 
 
Nan Ya Technology Corporation
 patents

Years Active: 2010-2024

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28 patents (USPTO):
1. 12107002 - Manufacturing method of semiconductor structure (2024-10-01),
2. 11935780 - Semiconductor structure and manufacturing method thereof (2024-03-19),
3. 11659707 - Method of manufacturing a semiconductor structure (2023-05-23),
4. 11488964 - Method of manufacturing semiconductor structure having word line disposed over portion of an oxide-free dielectric material in the non-active region (2022-11-01),
5. 11482419 - Method for preparing transistor device (2022-10-25),
6. 11315930 - Semiconductor structure and method of manufacturing the same (2022-04-26),
7. 11101273 - Semiconductor structure having word line disposed over portion of an oxide-free dielectric material in the non-active region (2021-08-24),
8. 10937886 - Semiconductor device with negative capacitance material in buried channel (2021-03-02),
9. 10903080 - Transistor device and method for preparing the same (2021-01-26),
10. 10825931 - Semiconductor device with undercutted-gate and method of fabricating the same (2020-11-03),
11. 10825898 - Semiconductor layout structure including asymmetrical channel region (2020-11-03),
12. 10818800 - Semiconductor structure and method for preparing the same (2020-10-27),
13. 10763212 - Semiconductor structure (2020-09-01),
14. 10559661 - Transistor device and semiconductor layout structure including asymmetrical channel region (2020-02-11),
15. 10559560 - Semiconductor electrostatic discharge protection device (2020-02-11),

Title: Wei-Ming Liao: Innovator in Semiconductor Technology

Introduction

Wei-Ming Liao is an accomplished inventor based in Taoyuan, Taiwan, recognized for his significant contributions to semiconductor technology. With a remarkable portfolio of 28 patents, Liao's work demonstrates a commitment to innovation in the field, particularly through advancements in manufacturing methods for semiconductor structures.

Latest Patents

Among his latest innovations, Liao has developed a manufacturing method of a semiconductor structure. This method involves etching a substrate to create distinct top surfaces, implanting boron to enhance p-type concentration on the surface, and subsequently forming dielectric layers. This technique is pivotal in improving semiconductor performance and reliability. Another notable patent by Liao focuses on similar methodologies aimed at refining semiconductor structures, emphasizing his expertise and consistency in this advanced technological domain.

Career Highlights

Wei-Ming Liao is currently employed at Nan Ya Technology Corporation, where he continues to pioneer methods that push the boundaries of semiconductor applications. His extensive patent portfolio reflects not only his individual creativity but also his ability to translate theoretical concepts into practical solutions that benefit the electronic manufacturing sector.

Collaborations

Liao often collaborates with esteemed colleagues such as Tseng-Fu Lu and Ching-Chia Huang. Their combined efforts showcase a synergy that enhances innovation within the company, as they work together on projects that focus on improving semiconductor technologies.

Conclusion

Wei-Ming Liao's influence in the semiconductor industry is marked by his significant inventions and collaborative efforts. With 28 patents to his name, his work at Nan Ya Technology Corporation plays a crucial role in shaping the future of semiconductor manufacturing. Through his innovative methods, Liao exemplifies the spirit of creativity and advancement that is essential in today's technology-driven world.

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