The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Apr. 18, 2019
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Cheng-Hsien Hsieh, New Taipei, TW;

Ching-Chia Huang, Taipei, TW;

Chen-Lun Ting, Taipei, TW;

Tseng-Fu Lu, New Taipei, TW;

Wei-Ming Liao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 27/108 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/528 (2013.01); H01L 23/53257 (2013.01); H01L 27/10808 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01);
Abstract

A semiconductor structure includes a substrate including a surface, a first doped region and a second doped region, wherein the first doped region and the second doped region are disposed under the surface; a gate structure disposed between the first doped region and the second doped region; a capacitor disposed over and electrically connected to the first doped region; and a bit line disposed over and electrically connected to the second doped region, wherein the bit line includes a conductive portion and an insulating portion surrounding the conductive portion, and the insulating portion includes ferroelectric material.


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