The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Aug. 21, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Jhen-Yu Tsai, Kaohsiung, TW;

Tseng-Fu Lu, New Taipei, TW;

Wei-Ming Liao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 29/1045 (2013.01); H01L 29/66492 (2013.01); H01L 29/66568 (2013.01);
Abstract

The present disclosure provides a transistor device and a method for preparing the same. The transistor device includes an isolation structure disposed in a substrate, an active region disposed in the substrate and surrounded by the isolation structure, a first upper gate disposed over the active region and a portion of the isolation structure, a source/drain disposed at two sides of the gate, and a pair of first lower gates disposed under the first upper gate and isolated from the active region by the isolation structure. In some embodiments, the pair of first lower gates extend in a first direction, the first upper gate extends in a second direction, and the first direction and the second direction are different.


Find Patent Forward Citations

Loading…