The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Feb. 12, 2018
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Cheng-Hsien Hsieh, New Taipei, TW;
Tseng-Fu Lu, New Taipei, TW;
Jhen-Yu Tsai, Kaohsiung, TW;
Ching-Chia Huang, Taipei, TW;
Wei-Ming Liao, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78648 (2013.01); H01L 29/4236 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/66484 (2013.01); H01L 29/78 (2013.01); H01L 29/78696 (2013.01); H01L 29/7831 (2013.01);
Abstract
The present disclosure provides a semiconductor structure including a substrate, a bottom gate portion disposed in the substrate, a top gate portion stacked over the bottom gate portion, a first channel layer sandwiched between the top gate portion and the bottom gate portion, and a source/drain region disposed in the substrate at two opposite sides of the top gate portion.