The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jun. 02, 2023
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Kai-PO Shang, Taichung, TW;
Wei-Ming Liao, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H10B 12/01 (2023.02); H10B 12/02 (2023.02); H10B 12/482 (2023.02);
Abstract
A semiconductor memory device includes a substrate with an active area, a bit line contact in contact with the active area, and a bit line having an end portion in contact with the bit line contact, wherein the end portion has a first trapezoidal profile. A semiconductor memory device manufacturing method is also disclosed to utilize a vertical etching process which has an etching recipe to have higher conductive material/barrier layer selectivity, thereby enlarging bit line contact to active area landing area and improving a contact resistance of the bit line contact.