The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Mar. 22, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Ching-Chia Huang, Taipei, TW;

Wei-Ming Liao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 23/532 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 21/30604 (2013.01); H01L 23/528 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 29/0847 (2013.01); H01L 29/4925 (2013.01); H01L 29/4958 (2013.01); H10B 12/033 (2023.02); H10B 12/053 (2023.02); H10B 12/31 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract

A method of manufacturing a semiconductor structure includes providing a substrate having an active region surrounded by an isolation layer; forming a first trench and a second trench in the active region, and a third trench and a fourth trench in the isolation layer; forming a bottom work-function layer in the third trench and the fourth trench, respectively; forming a middle work-function layer on the bottom work-function layer and in the first and the second trenches; forming a top work-function layer on the middle work-function layer; and forming a capping layer on the top work-function layer that fills a remaining region of the first, the second, the third and the fourth trenches.


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