Tuby Tu

Title: Tuby Tu: Innovator in Dielectric Planarization and Field Isolation

Introduction

Tuby Tu is a prominent inventor based in Hsin-chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work primarily focuses on processes that enhance the efficiency and effectiveness of dielectric materials in integrated circuits.

Latest Patents

One of Tuby Tu's latest patents is titled "Process for intermetal SOG/SOP dielectric planarization." This innovative process describes a method for dielectric planarization without adverse effects. It begins with the formation of a silicon-rich oxide (SRO) layer on a substrate surface. Subsequently, a metal layer and an antireflective coating (ARC) layer are deposited over the SRO layer. These layers are then etched to define metal patterns using conventional lithography and etching techniques. Following this, an Ozone-TEOS (O.sub.3 -TEOS) layer and a SOG layer are formed over the entire substrate surface. The O.sub.3 -TEOS layer and SOG layer undergo etching back treatment to achieve a planar substrate surface, with only a small portion of the O.sub.3 -TEOS layer remaining. The etching back treatment can utilize PEB, TEB, or CMP techniques. Finally, a passivation layer is deposited over the remaining O.sub.3 -TEOS layer.

Another notable patent is "Micro-trench oxidation by using rough oxide mask for field isolation." This method outlines the formation of isolation regions in integrated circuits using a rough oxide mask. Initially, a layer of first dielectric is formed on the silicon substrate surface. This layer is patterned to define active device and isolation regions. A very thin layer of silicon dioxide is then applied, followed by a layer of rough oxide with appropriate grain size. The rough oxide grains serve as an etching mask, allowing for the spontaneous etching of the silicon dioxide layer and the underlying silicon substrate to create multiple trenches in the isolation region. After stripping the rough oxide grains and silicon dioxide layers, field oxidation is performed to complete the field oxide isolation formation.

Career Highlights

Tuby Tu has worked with various companies throughout his career, including Mosel Vitelic Corporation. His experience in the semiconductor industry has allowed him to develop innovative solutions that address critical challenges in dielectric materials and isolation techniques.