The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Sep. 09, 1997
Tuby Tu, Hsinchu, TW;
Kuang-Chao Chen, Hsinchu, TW;
Mosel Vitelic Inc., , TW;
Abstract
A method for forming a trenched polysilicon structure can be applied to a semiconductor device. The method includes steps of: a) providing a polysilicon layer; b) forming a dielectric layer on the polysilicon layer; c) forming a rugged oxide layer on the dielectric layer; d) removing a portion of the dielectric layer which is not covered by the rugged oxide layer for exposing a corresponding portion of the polysilicon layer; e) forming a plurality of microtrenches by etching the corresponding portion of the polysilicon layer; and f) removing the rugged oxide layer and the dielectric layer to obtain the trenched polysilicon structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile