The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Oct. 29, 1996
Applicant:
Inventors:
Kuang-Chao Chen, Hsin-Chu, TW;
Tuby Tu, Miao-Li, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ; 438631 ;
Abstract
A method for forming a planarization layer on a semiconductor device including the steps of first providing a substrate, then depositing a layer of a silicon-rich oxide material, then forming metal interconnects on the silicon-rich oxide layer, and depositing a TEOS-ozone oxide layer over the metal interconnects and the silicon-rich oxide layer such that a substantially planar surface is obtained.
Chen, Kuang-Chao. (1999). Teos-ozone planarization process (U.S. Patent No. 5869394). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5869394
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile