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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5883015 B1

PDFFull Text
Date of Patent:
Mar. 16, 1999

Filed:

Jul. 03, 1997

Method for using oxygen plasma treatment on a dielectric layer

Applicant:
Inventors:

Kent Liao, Hsinchu, TW;

Dinos Huang, Hsinchu, TW;

Tuby Tu, Hsinchu, TW;

Kuang-Chao Chen, Hsinchu, TW;

Wen-Doe Su, Hsinchu, TW;

Assignee:

Mosel Vitelic Inc., Hsinchu, TW;

Attorney:

Christie, Parker & Hale, LLP

Primary Examiner:

Charles Bowers

Assistant Examiner:

Thanh Nguyen

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438788 ; 438624 ; 438631 ; 438788 ; 438789 ; 438790 ; 438763 ;
Abstract

The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,

Find Patent Forward Citations

Liao, Kent. (1999). Method for using oxygen plasma treatment on a dielectric layer (U.S. Patent No. 5883015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5883015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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