Location History:
- Yun Lin, TW (1992 - 1993)
- Hsinchu, TW (1993 - 2002)
Company Filing History:
5 out of 9,166 
5 out of 442 Years Active: 1992-2002
Title: The Innovations of Wen-Doe Su
Introduction
Wen-Doe Su is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has advanced the development of flash memory processes and integrated circuit isolation methods.
Latest Patents
One of his latest patents is a flash memory process using polysilicon spacers. This invention involves an EPROM cell and a method that includes a gate structure with a sidewall spacer made from an amorphous or polycrystalline silicon layer. This layer is converted into an insulating layer, such as silicon dioxide, which allows for more accurate deposition and a more uniform layer compared to conventional dielectric layer deposition. Another notable patent is the modified poly-buffered isolation method. This method focuses on forming field isolation regions on a semiconductor substrate for integrated circuits. It includes a sandwich-type structure as an oxidation mask, which consists of an underlying oxide layer, a polysilicon layer, and two silicon nitride layers of varying thicknesses.
Career Highlights
Wen-Doe Su has worked with several notable companies throughout his career, including the Industrial Technology Research Institute and Mosel Vitelic Corporation. His expertise in semiconductor technology has made him a valuable asset in these organizations.
Collaborations
He has collaborated with several talented individuals in his field, including Neng-Wei Wu and Jen-Di Wen, who is a prominent female engineer.
Conclusion
Wen-Doe Su's contributions to semiconductor technology and his innovative patents have significantly impacted the industry. His work continues to influence advancements in flash memory and integrated circuit design.