The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jun. 05, 1998
Applicant:
Inventors:
Wen-Doe Su, Hsinchu, TW;
Thomas Chang, Taichung, TW;
Kuo-Tung Sung, Hsinchu, TW;
Mao Song Tseng, Hsinchu, TW;
Shih-Chi Lai, Hsinchu, TW;
Kun-Yu Sung, Hsinchu, TW;
Liang-Chen Lin, Hsinchu, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
An EPROM cell and a method that includes a gate structure having a sidewall spacer. The sidewall spacer is made by way of an amorphous or polycrystalline silicon layer, which is converted into an insulating layer such as silicon dioxide. Deposition of the amorphous or polycrystalline silicon layer is more accurate and produces a more uniform layer than conventional dielectric layer deposition.