Hsinchu, Taiwan

Kun-Yu Sung

This inventor holds 1 USPTO granted patent. Top assignee: Mosel Vitelic Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kun-Yu Sung. Retrieved from https://idiyas.com/inventor/kun-yu-sung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Kun-Yu Sung: Innovator in Flash Memory Technology

Introduction

Kun-Yu Sung is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of flash memory technology. His innovative approach has led to advancements that enhance the performance and reliability of memory devices.

Latest Patents

Kun-Yu Sung holds a patent for a flash memory process using polysilicon spacers. This patent describes an EPROM cell and a method that includes a gate structure featuring a sidewall spacer. The sidewall spacer is created from an amorphous or polycrystalline silicon layer, which is then converted into an insulating layer such as silicon dioxide. This method of deposition is more accurate and results in a more uniform layer compared to conventional dielectric layer deposition. He has 1 patent to his name.

Career Highlights

Kun-Yu Sung is currently employed at Mosel Vitelic Corporation, where he continues to work on innovative memory technologies. His expertise in the field has made him a valuable asset to the company and the industry as a whole.

Collaborations

Some of his coworkers include Wen-Doe Su and Thomas Chang, who have collaborated with him on various projects within the company.

Conclusion

Kun-Yu Sung's contributions to flash memory technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence advancements in memory device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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