The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Aug. 17, 1990
Applicant:
Inventor:
Wen-Doe Su, Yun Lin, TW;
Assignee:
Industrial Technology Research Institute, Chutung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 47 ; 437 48 ; 437 60 ; 437203 ; 437228 ; 437233 ; 437919 ;
Abstract
A process for producing a random access memory cell having an improved capacitor structure that thereby permits greater integration. The capacitor is a merged combination of a stacked trench and a stacked capacitor which has at least two plates separated by a dielectric layer. The plates are formed of polysilicon and extend partially over the gate region, over the source region, over the sidewalls and bottom of a trench, and partially over the field oxide.