The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
Jun. 03, 1992
Wen-Doe Su, Yun Lin, TW;
Neng-Wei Wu, Taipei, TW;
Abstract
A method of forming a self-aligned metal oxide semiconductor (MOS) structure is described. Multilayer dielectrics are used at the edge of the gate electrode, and the gate electrode, the source and the drain have metal silicide regions. The first layer of dielectric is used to define a lightly doped drain (LDD) structure and the second dielectric layer serves to extend the oxide region at the gate edge and to improve the source/drain junction leakage property and to reduce the shorting percentage of gate to source/drain. A special device structure with extended lateral diffusion of junction under the oxide at the gate edge will be performed by using this method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile